STMicroelectronics’ (Geneva) latest 1200-V IGBTs use second-generation trench-gate field-stop high-speed technology to boost energy efficiency and ruggedness in applications such as solar inverters, welders, uninterruptible power supplies, and power factor correction (PFC) converters. According to the company, the H Series 1200-V IGBTs have up to 15 percent lower turn-off losses and up to 30 percent lower turn-on losses. The saturation voltage (Vce(sat)) down to 2.1 V (typical, at nominal collector current and 100°C) ensures minimal overall losses for higher-efficiency operation at switching frequencies above 20 kHz. They also offer:
- The option of an integrated very fast-recovery anti-parallel diode for hard-switching circuits and minimizing energy losses in circuits with a freewheel diode.
- Desirable EMI (electromagnetic interference) characteristics.
- A positive temperature coefficient of Vce(sat), with close distribution of parameters from device to device for safer parallel operation in high-power applications.
For more information, visit www.st.com