IXYS Integrated Circuits Division (Beverly, MA) announced the availability of the IX2204 Dual IGBT Gate Driver. The IX2204 features two high-current outputs, each capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs have a wide operation voltage range of -10V to +26V. The negative gate drive capability can be used to insure the turn-off of high power IGBTs. The outputs can be paralleled for IGBT gates that require higher drive current. Other features include:
- Ability to provide the +18 to +20V turn-on and the -2V to -5V turn-off drive voltages required by many SiC power MOSFETs.
- A desaturation detection circuit.
- TTL-compatible inputs.
- An extended operating temperature range of -40°C to +125°C.
For more information, visit www.ixysic.com.