Richardson RFPD, Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree, Inc. (Cree).

The C2M1000170D Z-FET offers high-speed switching with low capacitances and high blocking voltage with low RDS(on). It is easy to parallel, simple to drive and resistant to latch-up. The C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V, and it replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high voltage buses is required to operate system logic, displays and cooling fans. This new SiC MOSFET beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability, while lowering system implementation costs.

Key features of the C2M1000170D include:

·         Drain-source breakdown voltage (V(BR)DS): 1700V

·         Continuous drain current (IDS (DC) @ 25 ºC): 4.9A

·         Continuous drain current (IDS (DC) @ 100 ºC): 3.0A

·         Drain-source on-state resistance (RDS(ON) @ 25 ºC): 1.0Ω

·         Package: TO-247-3

More information is available online at