Renesas Electronics and California Eastern Laboratories (CEL) introduce the NE3516S02 and NE3513M04 GaAs FETs which were specifically designed to meet the demanding requirements of X to Ku band low noise block (LNB) downconverters for direct broadcast satellites. These general purpose GaAs FETs are also well suited for general purpose X to Ku band wireless communications.

Key features
These new GaAs FETs offer improved Associated Gain and Noise Figure performance over previous generation devices.

Typical performance at 12GHz with bias 2V / 10mA:

NE3516S02:    NF = 0.35dB, Ga = 14dB  (typically used for 1st stage)

NE3513M04:  NF = 0.45dB, Ga = 13dB (typically used for 2nd stage)

Both devices maintain impressive NF and Ga at the lower bias of 2V / 6mA, as follows:

NE3516S02:    NF = 0.35dB, Ga = 13.5dB

NE3513M04:  NF = 0.50dB, Ga = 12dB

Pricing, packaging, and availability

Samples are available now at CEL.  Pricing is as follows:

NE3516S02:         $0.72 @ 100K pcs

NE3513M04:       $0.52 @ 100K pcs

For more information on this new series of NE3516S02 and NE3513M04 Small Signal GaAs FETs, please visit