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Advanced Power Electronics Corp. has launched an asymmetric-dual N-channel enhancement mode power MOSFET targeting synchronous buck dc/dc converter power designs.

Packaged in a small 3mm square PMPAK
3x3,  the AP6950GYT comprises a “high-side” control MOSFET (CH-1) and a “low-side” synchronous MOSFET (CH-2), providing a compact solution optimised for synchronous buck applications.  Drain-Source breakdown voltage (BVDSS) for both channels is 30V, while on-resistance is low at 18mΩ (CH-1) and 10.5mΩ (CH-2)

Devices are RoHS-compliant and halogen-free; more data is available at www.a-powerusa.com/docs/AP6950GYT-3.pdf

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