Transphorm Inc. announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing what is believed to be the world’s first JEDEC-qualified 600 V GaN device platform, according to the company. Based on Transphorm’s EZ-GaN technology, the TPH3006PS GaN high electron mobility transistor (HEMT) combines low switching and conduction losses to reduce energy loss by 50 percent compared to conventional silicon-based power conversion designs, according to the company. The TO-220-packaged GaN transistor features low on-state resistance RDS(on) of 150 milliohms (mΩ), low reverse-recovery charge (Qrr) of 54 nanocoulombs (nC) and high-frequency switching capability. Also available in industry-standard TO-220 packages, the TPS3410PK and TPS3411PK GaN diodes offer 6 A and 4 A operating currents, respectively, with a forward voltage (Vf) of 1.3 Volts. In addition, three application kits — PFC (TDPS400E1A7), Daughter Board (TDPS500E0A) and Motor Drive (TDMC4000E0I) — are available for rapidly benchmarking the in-circuit performance of Transphorm’s products.
Transphorm Inc., www.transphormusa.com