Cree, Inc. announced the release of its second generation SiC MOSFET, positioned as enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These 1200-V MOSFETs deliver desirable power density and switching efficiency at half the cost per amp of Cree’s previous generation MOSFETs. According to the company, the performance of these new SiC MOSFETs enables the reduction of required current rating by 50-70 percent in some high power applications. The product offering range has been extended to include a much larger 25 mOhm die aimed at the higher power module market for power levels above 30 kW. The 80 mOhm device is intended as a lower cost, higher performance upgrade to the first generation MOSFET.
Cree, Inc., www.cree.com