Cree, Inc. announced a new family of 50-A Silicon Carbide (SiC) devices, including a 1700-V Z-FET SiC MOSFET. These new 50-A SiC devices, which also include a 1200V Z-FET SiC MOSFET and three Z-Rec SiC Schottky diodes, are asserted to enable a new generation of power systems with record-setting energy efficiency and lower cost of ownership than with conventional technologies. The new devices, available in die form, are designed for high-power modules for applications such as solar power inverters, uninterruptible power supply (UPS) equipment and motor drives. The 50-A SiC device series includes a 40 mOhm 1700V MOSFET, a 25 mOhm 1200V MOSFET and 50A/1700V, 50A/1200V, and 50A 650V Schottky diodes. Samples of all these high-power devices are available immediately.