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Cree CGH21120F/CGH25120FComing in industry-standard ceramic-metal packages, Cree's CGH21120F and CGH25120F GaN HEMT microwave transistors perform in telecommunication applications, such as W-CDMA, LTE and WiMAX. The components consist of single, input-pre-matched GaN HEMT devices providing >120 W. The CGH21120F is designed for frequencies from 1,800 MHz to 2,300 MHz, while the CGH25120F is optimized for frequencies from 2,300 MHz to 2,700 MHz. The units complement Cree’s RoHS-compliant HEMT microwave transistors for WiMAX applications available for 802.11x OFDM average power levels of 2 W, 4 W, and 8 W.

Cree
919-313-5300, www.cree.com

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