Using the High Voltage Vertical Field Effect Transistor (HVVFET) architecture, HVVi Semiconductors’ HVV0405-175 and HVV0912-150 RF power transistors operate across the UHF frequency band from 420 MHz to 470 MHz and 960 MHz to 1,215 MHz, respectively. The 175-W HVV0405-175 exhibits 25-dB gain at 300-µs pulse width and pulse duty cycle of 10% at 50-V VDD and 50-nA IDQ in radar applications. The 150-W HVV0912-150 operates off of a 50-V supply voltage while delivering 20-dB gain under a pulse width of 10 µs and a pulse duty cycle of 10% in airborne distance measuring equipment (DME) applications. The products present a VSWR of 20:1 in a HV400-style, 2-lead metal flanged package with a liquid crystal polymer lid. Pricing is $280.42 and $316.61, respectively, in 24 quantities.
HVVi Semiconductors, Inc.