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Cree CGH40120FConsisting of a single unmatched GaN HEMT die, Cree’s CGH40120F GaN HEMT microwave transistor delivers a minimum saturated output power of 120 W at 28 V. The component performs in general-purpose military and industrial applications, such as electronic warfare, tactical communications, radar, instrumentation, and direct video broadcast applications. The performance of the device has been demonstrated in a number of amplifier applications, including a 1,200-MHz to 1,400-MHz instantaneous-bandwidth reference amplifier that offers >18-dB typical small-signal gain, 100-W typical CW output power, and typical power-added efficiencies of 75%. The unit comes in a flanged ceramic-metal package.

Cree, Inc.
919-313-5300, www.cree.com

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