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High-voltage MOSFETs built on Gen II Super Junction Technology

Vishay Intertechnology, Inc. announced the addition of 11 new devices to its 500 V series of high-voltage MOSFETs optimized for operation in switch mode power supplies (SMPS) to 500 W. Featuring the same benefits of extremely ...

LISTED UNDER: Power

N-channel power MOSFETs achieve industry’s lowest resistance

Texas Instruments (Dallas, TX) introduced 11 new N-channel power MOSFETs to its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry’s lowest on-resistance (Rdson) in ...

LISTED UNDER: Power

GaN power transistor half bridge enables 12-V to 1.2-V PoL system efficiency at 25 A

EPC (El Segundo, CA) announced the EPC2100, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are ...

LISTED UNDER: ICs | Transistors | FET

15-W GaN on SiC pulsed power transistor delivers 63 percent drain efficiency

M/A-COM Technology Solutions Inc. (Lowell, MA) announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized GaN on Silicon Carbide RF power transistors optimized for ...

LISTED UNDER: Transistors | Power

SiC 1200-V MOSFET boasts RDS(ON) of 25-mOhms in TO-247-3 package

Cree (Durham, NC) introduced a silicon carbide (SiC) 1200-V MOSFET with an RDS(ON) of 25 mΩ in an industry standard TO-247-3 package. The C2M0025120D, is expected to be widely adopted in PV inverters, high voltage DC/DC converters, induction…

LISTED UNDER: FET | Power

Wide-band, unmatched transistor enables efficiencies up to 77%

RFMW, Ltd. announces design and sales support for the T2G6001528-SG from TriQuint. This wide band, unmatched transistor offers up to 15W P3dB of power from DC to 6GHz. GaN on SiC HEMT enables efficiencies up to 77%. Other features include....

LISTED UNDER: Power

Current-sensing IC boosts overall system efficiency

International Rectifier (El Segundo, CA) announced the introduction of the robust IR25750 general-purpose current-sensing IC available in an ultra-compact SOT23-5L package that boosts overall system efficiency while delivering dramatic space savings....

LISTED UNDER: Power

Load switch offers low on-resistance and 4-A maximum continuous current

Advanced Power Electronics Corp. (San Jose, CA) launched a small load switch with controlled turn on and very low on-resistance. The APE8937-HF-3 load switch contains one N-channel MOSFET that can

LISTED UNDER: Power Management | Power

JEDEC-qualified 600-V GaN-on-Silicon family includes PQFN-packaging, smaller die sizes

Transphorm Inc. (Goleta, CA) announced 600V GaN (Gallium Nitride)-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600-V GaN HEMTs (high electron mobility transistors) use the

LISTED UNDER: High Voltage | Power

AEC-Q101-qualified MOSFETs enable lower on-resistance per die area

Vishay Intertechnology (Malvern, PA) released the first AEC-Q101-qualified TrenchFET power MOSFETs to feature ThunderFET technology. To increase efficiency and save space in automotive applications, the Vishay Siliconix 100 V n-channel SQJ402EP, SQJ488EP...

LISTED UNDER: FET | Power

Power management ICs designed for RF agile radio applications and FPGAs

Analog Devices (Norwood, MA) introduced an integrated family of efficient power management ICs (integrated circuits) targeting compact, high density power solutions for RF agile radio and FPGA/processor-based (field-programmable gate array) applications. Features include multiple buck regulators....

LISTED UNDER: Power

Off-line PWM controllers features integrated power MOSFET

Allegro MicroSystems, LLC introduces a new family of off-line PWM controllers that incorporate both a sense MOSFET and a current mode PWM controller IC. This new series is offered by Allegro and manufactured and developed by Sanken Electric Co., Ltd. in Japan.

LISTED UNDER: Power

Audio controller IC offers improved efficiency

The PowIRaudio family of devices integrates PWM controller and digital audio power MOSFETs in a single package to offer a highly efficient, compact solution that reduces component count, shrinks PCB size up to 70 percent and simplifies Class D amplifier design.

LISTED UNDER: Power

IC is ideal for larger systems implementing IO-Link

Linear Technology Corporation introduces the LTC2874, an IO-Link master IC, combining a power and communications interface to four remote IO-Link devices (slaves).  A rugged interface and rich feature set make the LTC2874 ideal for larger systems implementing IO-Link (IEC61131-9) in harsh, industrial environments.

LISTED UNDER: Power

GaN amplifier offers exceptional thermal resistance

Nitronex announced the release of the NPA1006, a new broadband GaN amplifier. This 28-V, 20-MHz to 1-GHz, 15-W amplifier with 14 dB gain and 60 percent drain efficiency is housed in an industry-standard 6-mm x 5-mm DFN plastic package. The thermal resistance is

LISTED UNDER: Microwave | Power

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