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Electrostatic actuator IC intended for pico-projector, 3D-scanning, and HUD systems

Teledyne DALSA’s Semiconductor Foundry (BROMONT, Quebec, Canada), a division of Teledyne Technologies, announced today the availability of its DH0357AQ Electrostatic Actuator High Voltage IC. Using proprietary High Voltage CMOS/DMOS technology, the DH0357AQ’s high accuracy...

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JEDEC-qualified 600-V GaN-on-Silicon family includes PQFN-packaging, smaller die sizes

Transphorm Inc. (Goleta, CA) announced 600V GaN (Gallium Nitride)-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600-V GaN HEMTs (high electron mobility transistors) use the

LISTED UNDER: High Voltage | Power

120W GaN transistors offer > 50% drain efficiency from a 36V supply

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration.

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Six-hundred-Volt GaN-on-silicon power devices are JEDEC-qualified

Transphorm Inc. announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing what is believed to be the world’s first JEDEC-qualified 600 V GaN device platform, according to the company. Based on Transphorm’s EZ-GaN technology, the TPH3006PS GaN high

LISTED UNDER: High Voltage | Power

IC simplifies design and reduces overall system cost

International Rectifier expanded its family of SmartRectifier ICs with the introduction of the IR1169 high speed synchronous rectifier (SR) controller for flyback, forward and half-bridge converters used in AC-DC adapter, PC, server and Telecom SMPS applications.

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