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Setting New Benchmarks in Power Efficiency for High-Power Switching Systems

ON Semiconductor, driving energy efficiency innovations, has introduced a new series of insulated gate bipolar transistors (IGBTs) which utilize its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG...


Front End IC Offers Solutions for Commercial Radar, 5G Communications Markets

Anokiwave, Inc., an innovative company providing highly integrated core IC solutions for mmW markets and AESA based solutions, announced it has extended its X-band IC product line with the addition...


P-Channel MOSFETs Reduce Losses In Load Switching

Supplied in small form-factor 2mm x 2mm DFN2020 packages the DMP1022UFDF and DMP2021UFDF P-channel MOSFETs introduced by Diodes Incorporated are rated at 12V and 20V, respectively. These devices are specifically designed for load switching in high-efficiency battery management of portable consumer electronics such as Tablets, Smartphones, Ultrabooks, and for...

LISTED UNDER: Transistors

Bluetooth® 4.2 Low Energy Silicon, Modules and Software

Microchip Technology Inc. announces its next-generation Bluetooth® Low Energy (LE) solutions. Qualified to the latest Bluetooth 4.2 standard, the IS1870 and IS1871 Bluetooth LE RF ICs, along with the BM70 module, expand Microchip’s existing Bluetooth portfolio and carry both worldwide regulatory and Bluetooth Special Interest Group (SIG) certifications. These new offerings are ideal for Internet...

LISTED UNDER: High Frequency (RF)

20 V n-channel MOSFET offers 0.357 mm profile

New Vishay Intertechnology 20 V Chipscale MOSFET in 0.8 mm by 0.8 mm Package Saves Space and Power in Mobile Applications MICRO FOOT® Device Features Industry-Low RDS(ON) for...

LISTED UNDER: Multilayer | FET

MOSFET enhances buck converter power density

Aimed at increasing the power density of DC-DC converters, the DMC1028UFDB complementary MOSFET pair introduced by Diodes Incorporated integrates an N-channel MOSFET and a P-channel MOSFET in a single DFN2020 package...

LISTED UNDER: ICs | Transistors

Gallium nitride power transistors improve power conversion performance

Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors eGaN® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters. EL SEGUNDO, Calif.—May 2015 — Efficient Power Convers...

LISTED UNDER: ICs | Transistors

250 watt ISM transistor offers up to 51% drain efficiency

RFMW, Ltd. announces design and sales support for NXP’s BLF2425M7LS-250P. This highly efficient (51% drain efficiency) LDMOS transistor is internally matched for broadband performance from 2400 to 2500MHz, supporting ISM (Industrial, Scientific and Medical) applications. The earless, ceramic package adds to ...

LISTED UNDER: ICs | Transistors

The industry’s first 600V GaN transistor in a TO-247 package

Transphorm Inc. is offering engineering samples of its TPH3205WS transistor, the first 600V GaN (Gallium Nitride) transistor in a TO-247 package. Offering 63 mOhm R(on) and 34A ratings, the device utilizes the company’s Quiet Tab source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed ...

LISTED UNDER: ICs | Transistors

140W ISM band transistor provides clean power

RFMW, Ltd. announces design and sales support for an LDMOS power transistor internally matched for broadband operation from 2400 to 2500MHz. NXP’s BLF2425M7LS140 provides 140W average CW power with 18.5dB of gain. The BLF2425M7LS140 draws 1.3A from a 28V supply with efficiencies up to 52%....

LISTED UNDER: ICs | Transistors

100W S-Band transistors cover frequencies up to 3.5GHz

RFMW, Ltd. announces design and sales support for the TGF2929-FL & TGF2929-FS GaN transistors from TriQuint (Qorvo). These 28V devices offer 107W P3dB for applications in Radar, professional or military communication systems and avionics. Covering frequencies up to 3.5GHz ...

LISTED UNDER: Transistors

High-voltage MOSFETs built on Gen II Super Junction Technology

Vishay Intertechnology, Inc. announced the addition of 11 new devices to its 500 V series of high-voltage MOSFETs optimized for operation in switch mode power supplies (SMPS) to 500 W. Featuring the same benefits of extremely ...


N-channel power MOSFETs achieve industry’s lowest resistance

Texas Instruments (Dallas, TX) introduced 11 new N-channel power MOSFETs to its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry’s lowest on-resistance (Rdson) in ...


IGBTs optimized for fast switching applications

International Rectifier (El Segundo, CA) announced the expansion of its portfolio of insulated-gate bipolar transistors (IGBTs) with the introduction of a family of rugged, reliable 650V devices optimized for fast switching applications including solar inverters....

LISTED UNDER: ICs | Transistors | IGBTs

GaN HEMT die specified for operation up to 6GHz

Cree, Inc. (Durham, NC) has developed a family of 50V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6GHz. The new 40W CGHV60040D and 170W CGHV60170D represent the only 50V bare GaN HEMT die available....

LISTED UNDER: ICs | Transistors


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