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Medium Frequency 1200V IGBT

Mitsubishi_NFM_WEB.jpgThe NFM series Medium Frequency 1200V IGBT from Mitsubishi Electric combines 5th Generation CSTBT (Carrier stored Trench Bipolar Transistor) chip technology with LPT (Light Punch Through) wafer. The device shows a fast switching behavior without increasing on-state voltage drop. Devices optimized for 30 kHZ, specialize in high speed turn-off characteristics without a considerable increase in losses by maintaining the typical saturation voltage VCE(sat) to 3.0V at rated collector current and a junction temperature of 125°C. The series is available with a rated voltage of 1200V and rated current range of 100A to 300A in Dual modules and also in single modules at 1200V with rated current of 400A, 600A. The product line is RoHS compliant to ensure the environmental compatibility and reliable operation
Mitsubishi Electric Europe B.V.
+49 (21 02) 486-4520, www.mitsubishichips.com [1]

Content Item Type: 
Product Announcement [2]
Meta Canonical URL: 
http://www.ecnmag.com/product-releases/2007/05/medium-frequency-1200v-igbt
Summary: 
The NFM series Medium Frequency 1200V IGBT from Mitsubishi Electric combines 5th Generation CSTBT (Carrier stored Trench Bipolar Transistor) chip technology with LPT (Light Punch Through) wafer. The device shows a fast switching behavior without increasing on-state voltage drop. Devices optimized for 30 KHZ, specialize in
Meta Keywords: 
saturation voltage VCE, on-state voltage drop, Trench Bipolar Transistor, NFM series Medium, Frequency 1200V IGBT, fast switching behavior, high speed turn-off, Through) wafer., Mitsubishi Electric, Light Punch, RoHS compliant, chip technology, considerable increase, Generation CSTBT, junction temperature, environmental compatibility, Dual modules, reliable operation, product line, single modules, 300A, 600A, LPT, kHZ, losses, Carrier, device, Devices
Meta Description: 
The NFM series Medium Frequency 1200V IGBT from Mitsubishi Electric combines 5th Generation CSTBT (Carrier stored Trench Bipolar Transistor) chip technology with LPT (Light Punch Through) wafer. The device shows a fast switching behavior without increasing on-state voltage drop. Devices optimized for 30 KHZ, specialize in
Product/Service Categories: 
ICs [3]
Legacy NID: 
78 614
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Source URL: https://www.ecnmag.com/product-releases/2007/05/medium-frequency-1200v-igbt

Links
[1] http://www.mitsubishichips.com/
[2] https://www.ecnmag.com/content-item-types/product-announcement
[3] https://www.ecnmag.com/product-categories/ics