Researchers at Purdue University have developed a new technology design for field-effect transistors (FETs). FETs use an electric field to control the flowing current, and serve as the basic switching devices within many electronic gadgets.
The new approach, which joins lasers and transistors, can provide better switching behavior for computers and next-gen nanodevices.
“Our technology is unique because it merges lasers and transistors,” says Tillmann Kubis, research assistant professor in Purdue’s School of Electrical and Computer Engineering, Network for Computational Nanotechnology, and Purdue Center for Predictive Materials and Devices. “There is traditionally not a lot of overlap between these two areas, even though the combination can be powerful with the Internet of Things and other related fields.”
By combining transistor tech and the quantum cascade laser into one design concept, integrated circuit manufacturers may have an easier time producing smaller components with more transistors per unit area.
Current transistor designs have an issue of low on-current densities, or suppressed off-current densities. Those problems may cause a loss of power and a reduction in a device’s battery life.
By contrast, Purdue University’s approach includes a large on-current, low off-current, and small subthreshold swing. All of these features allow for increased speeds, sensitivity, and energy savings.
“What we have created here at Purdue really opens the door for the future of field effect transistors,” says Kubis. “It is exciting to be at the forefront of creating technology that will have such a wide impact across different areas.”
Now, the researchers will focus on improving the design’s effectiveness and optimization.