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Plano, Texas – November 16th, 2011 –-- Diodes Incorporated has picked up two awards from the United Kingdom’s National Microelectronics Institute (NMI) at its prestigious Industry Summit & Gala Dinner and Awards 2011 held at the Wyndham Grand Chelsea Harbour, London, on November 3, 2011. Diodes won the award categories for Skills, Training and Development and for Manufacturing Site of the Year. Now in its 9th year, the NMI’s Industry Summit & Gala Dinner and Awards attracts more than 300 guests from the United Kingdom and around the world.

On presenting the two awards, the NMI’s Chief Executive Officer, Derek Boyd, said, “In the category of skills, training and development, Diodes Incorporated’s Oldham manufacturing operation showed clear leadership in the training of its workforce and in its engagement in problem solving, which has led to a fantastic improvement in business metrics.”

Diodes Incorporated wins the NMI award for Skills, Training and Development for 2011.

He continued, “As the manufacturing site of the year, Diodes Incorporated’s wafer fab in Oldham impressed the judging panel the most, by clearly demonstrating a wide range of successes in a variety of different areas. These included: significant increases in productivity, capacity and toolset usage; significant reductions in costs; and workforce engagement, resulting in many very tangible improvements in the manufacturing process.”

Tim Monaghan, Head of Diodes’ United Kingdom Operations, said, “We are very proud to have won these two awards, which are both, in no small way, a result of the hard work and commitment of individual employees working closely together in dedicated teams to achieve some very far-reaching and demanding manufacturing goals.”

Commenting on the award, Dr Keh-Shew Lu, President and Chief Executive Officer of Diodes Incorporated, said, “Excellence in manufacturing is one of the real cornerstones of Diodes’ success, and I am particularly proud of our Oldham team for its tremendous effort over the years, which will strongly contribute to Diodes’ growth in the future.”

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