Siltronic AG and imec have concluded an agreement to collaborate on the development of silicon wafers with a gallium nitride layer as partner of imec’s GaN-on-Si industrial affiliation program (IIAP). The endeavor aims to enable production of solid-state lighting (e.g. LEDs) and power semiconductors of the next generation on 200 mm silicon wafers.
Gallium nitride (GaN) is a very promising material. Combining superior electron mobility, high breakdown voltage and good thermal conductivity, it is particularly suitable for optoelectronics and advanced power semiconductors. These are used, for example, in wind power turbines, solar power systems, electric vehicles and energy-saving kitchen appliances. In comparison with conventional, silicon-based applications, structures with GaN/(Al)GaN layers evidence a very efficient switching behavior. However, GaN technology still needs further refinement to also be economically competitive. To achieve this, inexpensive and efficient production methods for epitaxial deposition of GaN/(Al)GaN structures on larger-diameter silicon wafers are very promising.