About the Conference
The ICSI-7 forum is a biannual event that reviews and examines novel developments in physics and device technologies for silicon (Si) epitaxy, heterostructures and nanostructures.
Monday’s session offers two keynotes:
· "Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices", Masanobu Miyao, Taizoh Sadoh, Kohei Hamaya, Kyushu University, Japan;
· “Germanium and III-V for Beyond-Si CMOS: channel materials and gate stacks", presented by Matty Caymax, IMEC, Belgium
For registration, agenda, lodging, and all logistical information, see
For more information on Imec, see www.imec.be