The DSB 9000A is based on Nanoplas’s High Density Radical Flux (HDRF) technology.
The DSB 9000A performs key production steps in microelectronic manufacturing, including removal of Bosch-process polymers, residues and photoresist from 80-250°C; isotropic etching of organic sacrificial layers; and pre-wafer bonding activation.
The DSB 9000A outperforms conventional radio-frequency (RF) plasma and microwave systems, while greatly reducing the risk of surface damage, said Gilles Baujon, CEO of Nanoplas. With 100 percent gas disassociation, the DSB 9000A ICP source produces free-radical concentration levels of up to 1,000 times greater than conventional plasma sources, thus providing enhanced process performance, including higher cleaning performance for high aspect ratio structures. The system’s proprietary technology eliminates the charging effects and UV radiation normally associated with conventional plasma, allowing stiction-free processing and low-temperature operation.
HDRF offers 3 modes of operation covering a wide range of processes, from ultra-sensitive surface cleaning to removal of non-reactive residues. Typical throughput for photoresist stripping is 60-70 WPH, and greater than 100 WPH, per process module, for post-Bosch cleaning and surface activation.
Nanoplas is an innovator of specialized production solutions that deliver low-cost, green alternatives for treating wafer surfaces in next-generation devices, advanced MEMS, 3D TSVs, advanced packaging, power ICs, optoelectronic components and III-V compounds. Visit www.nanoplas.eu for more information.