Darnell’s Power Forum (DPF ’10) has expanded its focus to include the latest developments on GaN power devices, the Smart Grid, Energy Harvesting and Digital Power.
Will enhancement mode GaN transistors (eGaN) replace power MOSFET/IGBTs in power management applications? Alex Lidow, CEO of Efficient Power Conversion, believes it will. He will explain why at Darnell’s Power Forum ’10 Plenary Session, on September 13th, in Chicago. His paper, "Driving eGaN Transistors for Maximum Performance," will discuss the differences between eGaN and power MOSFETs and will show how to drive these devices to fully exploit their benefits in applications such as DC-DC conversion, Class D audio, and motion control. GaN compounds are being touted as the "best candidates" to replace silicon power devices. Adapting MOSFET driver ICs is one way to efficiently switch GaN. Lidow will also propose a specification for an "ideal" eGaN driver that would allow the designer to easily extract their full performance.