PARIS, FRANCE -- The 2014 International Group IV Photonics Conference, sponsored by the IEEE Photonics Society, will be held on 27 - 29 August, 2014, at the Cité Internationale Universitaire de Paris in Paris, France.  The conference features a full program of technical papers and invited presentations centered around Electro-Photonic Convergence on Silicon; Novel Materials & Structures; and Photonic Devices & Nanophotonics, as well as two poster sessions and a special dinner cruise on the historic River Seine.

Organized as a single-track program, the eleventh annual Group IV Photonics Conference (GFP-2014) will focus on current and future advancements in silicon photonics, and other Group IV element-based photonic materials and devices, including integration and fabrication technologies.  GFP-2014 fosters one-on-one interaction between colleagues, including oral and poster sessions of contributed and invited papers, as well as a plenary session with reviews of important topics in Group IV element photonics.

"The Group IV Photonics Conference is one of the leading international meetings dedicated to silicon photonics materials, devices and processes, and it continues to be a unique forum for the photonics engineers, researchers and academic professionals to collaborate and share information about the latest developments in this critical area of silicon photonics," said GFP 2014 General Chair, Laurent Vivien of the University of Paris Sud.  "Our conference format is organized to encourage interaction between participants and presenters in a program that combines invited speakers, engaging plenary talks and comprehensive technical sessions."

Plenary Speakers

Opening the conference are two plenary sessions on 27 August:

• "Recent Progress on Silicon Photonics R&D and Manufacturing on 300mm Wafer Platform," by Frederic Boeuf, ST Microelectronics (France).

• "Revolutionizing Computing & Communications with Silicon Photonics," by Mario Paniccia, Intel Corporation (USA).

Featured/Invited Speakers

Invited speakers and topics include:

• Harry Atwater, California Institute of Technology (USA) on "Photonic Design for Silicon Photovoltaics" - Trapezoidal broadband light trapping structures; broadband light trapping with photonic crystal superlattices; and III-V/Si nanowire arrays designed for broadband light trapping.

• Dan Buca, Forschungszentrum Juelich (Germany) on "Strain Engineering for Direct Bandgap GeSn Alloys" - The growth and characterization, including band structure and gain calculations, of strain-engineered (Si)GeSn/GeSn heterostructures with large Sn content for direct band gap semiconductors.

• Gregory Fish, Aurrion (USA) on "Heterogenous Integration for Telecom & Datacom" - presenting a heterogeneous integration process to enable high performance active components such as lasers, modulators, and photodetectors to be integrated on a silicon photonics platform with high performance passive components.

• Marko Loncar, Harvard University (USA) on "Diamond Photonics."

• Shayan Mookherjea, University of California at San Diego (USA) on "Generating Photon Pairs Using Silicon Photonics" - Silicon photonic waveguides and resonators fabricated using CMOS-compatible processes generate photon pairs at telecommunications wavelengths under room temperature conditions, with electrically controllable properties (tunable frequency-bin entangled comb and tunable joint spectral intensity).

• Robert Palmer, Karlsruhe Institute of Technology (Germany) on "Progress in Silicon Organic Hybrid (SOH) Integration" - An overview on recent achievements in the field of SOH integration, covering in-device electro-optic coefficients (r33) in excess of 200pm/V, highly efficient Mach-Zehnder modulators, IQ modulators, and modulator-based frequency comb generator.

• Gunther Roelkens, Ghent University (Belgium) on "Long-Wavelength Silicon Photonic Integrated Circuits" - Examining the development of silicon photonic integrated circuits operating beyond the telecommunication wavelength window, with heterogeneous integration of III-V and IV-VI semiconductors proposed to extend platform functionality.

• Mark Webster, Cisco (USA) on "An Efficient MOS-Capacitor-based Silicon Modulator & CMOS Drivers for Optical Transmitters" - Presenting a MOS-capacitor based silicon modulator in an MZI configuration, with a 9dB extinction ratio at 28 Gbps from the 1V output of a low-power CMOS inverter driver IC.

• Lars Zimmerman, IHP (Germany) on "Monolithic Integration of Photonic Devices in SiGe BiCMOS" - Reviewing the development status of device integration in photonic BiCMOS technology with basic photonic device performance and results of the first fully-integrated technology learning cycle.

Other technical program highlights

In addition, the GFP-2014 program will include two poster sessions as well as a post-deadline session to enable attendees to hear the latest developments in rapidly advancing technology fields.  A complete listing of the GFP-2014 program is available here: