June 8, 2012 – LaFox, Illinois: Richardson RFPD, Inc. today introduces a new 80-105 GHz balanced low noise amplifier (LNA) from United Monolithic Semiconductors S.A.S. (UMS). The CHA1008-99F is a broadband, four-stage monolithic LNA designed for millimeter-wave imaging applications and is also well-suited for commercial digital radios and wireless local area networks (LANs). The device is manufactured on a 0.10μm gate length pHEMT process, offering via holes through the substrate, air bridges and electron beam gate lithography.
Key features of the CHA1008-99F include:
- Broadband performance: 80-105 GHz16 dB linear gain
- 5 dB noise figure from 80 to 90 GHz
- DC bias: VD=2.5V @ ID=115 mA
- Chip size: 3.40x1.60x0.07mm