Low-Profile SiC MOSFET Modules Features Multiple Circuit Topologies
Fri, 01/27/2012 - 5:35am
Created with a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter, two new Powerex split dual SiC MOSFET Modules (QJD1210010 and QJD1210011) are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide transistors, with each transistor having a reverse-connected Zero Recovery free-wheel Silicon Carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Rated at 100A/1200V, QJD1210010 and QJD1210011 feature 175°C junction temperature, low internal inductance, desirable RDS(on), high-speed switching, low switching losses, low capacitance, low drive requirement, high power density, and isolated baseplate. These MOSFET modules can be used in energy saving power systems, such as fans, pumps and consumer appliances; high frequency type power systems, such as UPS, high speed motor drives, induction heating, welding and robotics; and high temperature power systems, such as power electronics in electric vehicle and aviation systems.