Ramtron International, a leading developer and supplier of ferroelectric-based low-power memory and integrated semiconductor products, announced sampling of its newest ferroelectric random access memory (F-RAM) product built on the company’s manufacturing line at IBM. The FM24C64C is a 64-Kbit, 5-volt serial F-RAM device that performs at bus speed and supports up to one-trillion (1e12) read/write cycles – a million times more than a comparable EEPROM device. The FM24C64C offers low power operation with 100 µA active current (at 100 kHz) and only 4 µA typical standby current. This F-RAM device is a direct hardware replacement for 64-Kb EEPROM and is ideal for nonvolatile memory applications that require frequent or rapid writes.
“The FM24C64C expands our family of low-density serial I2C devices manufactured on our IBM manufacturing line in Burlington, Vermont,” comments Ramtron marketing manager, Mike Peters. “The FM24xxC line of products includes 4-Kb, 16-Kb and 64-Kb serial devices with an I2C interface. Ramtron’s F-RAM products offer superior write performance, endurance and retention over competing devices.”
About the FM24C64C
The FM24C64C features a serial I2C interface, has an active current of 100 µA (typical at 100 kHz), and performs up to 1MHz bus frequency. The device is a direct drop-in replacement for 64-Kb serial EEPROM and is frequently used in industrial controls, metering, medical, military, gaming, and computing applications, among others. The FM24C64C is offered in an industry standard, RoHS compliant 8-pin SOIC package and operates over the industrial temperature range of -40°C to +85°C.
For more information, visit www.ramtron.com.