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N-Channel and P-Channel MOSFETS Come in Miniature SOT-563 Package

Mon, 04/11/2011 - 1:46pm
N channel and P channel MOSFETsCentral Semiconductor Corp. announced the introduction of its CMLDM3757 dual, complementary N-Channel and P-Channel MOSFETs packaged in the miniature SOT-563 surface mount case. Both devices have a maximum rated drain-source voltage of 20 V, and a minimum gate-source threshold voltage of 450 mV. The N-channel device has a maximum continuous drain current of 540 mA with a low rDS(ON) of 550 mOhms, while the P-channel has a 430 mA rating and a rDS(ON) of 900 mOhms. The CMLDM3757 is appropriate for design engineers seeking complementary N-Channel and P-Channel energy efficient MOSFETs. The SOT-563 package uses a board space area of 2.9 sq mm and has a maximum profile of 0.6 mm. This product is designed to solve space constrained circuit layouts in cellular phones, MP3 players, Bluetooth headsets, blood glucose analyzers, and hearing aids. Applications for these devices include DC to DC conversion, load switching, battery charging, and overall power management. Pricing starts at US$0.14 each for 3,000 pieces on tape and reel.

Central Semiconductor Corp.
631-435-1110, www.centralsemi.com 
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