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SiA444DJT purportedly features the industry's lowest profile for an n-channel MOSFET

Mon, 02/28/2011 - 7:52am
Vishay Intertechnology, Inc. today introduced new 30 V n-channel and 20 V p-channel TrenchFET power MOSFETs in the thermally enhanced Thin PowerPAK SC-70 package with an ultra-low 0.6 mm profile. The new SiA444DJT features the industry's lowest profile for an n-channel MOSFET in the 2 mm by 2 mm footprint area, while the SiA429DJT offers the industry's lowest on-resistance for a p-channel device with a sub-0.8 mm profile.

For handheld devices requiring an n-channel MOSFET that is thinner than the standard 0.8 mm, the SiA444DJT's 0.6 mm profile is 13 % less than the next-thinnest 2 mm by 2 mm device and 19 % less than the standard 0.8 mm height. In addition, the MOSFET offers low on-resistance of 17 m? at 10 V and 22 m? at 4.5 V, and the lowest maximum on-resistance multiplied by gate charge product — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — of 170 m?-nC at 10 V and 110 m?-nC at 4.5 V.

If a thinner p-channel is needed, the SiA429DJT provides the lowest on-resistance of 20.5 m? at 4.5 V, 27 m? at 2.5 V, 36 m? at 1.8 V, and 60 m? at 1.5 V. The device's on-resistance at 1.8 V is 12 % lower than the closest competing device, including MOSFETs with the standard 0.8 mm profile and all 2 mm by 2 mm p-channel MOSFETs. For handheld electronics, the lower on-resistance of the SiA429DJT and SiA444DJT translates into lower conduction losses, thus prolonging battery life between charges.

The ultra-slim Thin PowerPAK SC-70 package of the SiA444DJT and SiA429DJT is optimized for small handheld electronics, including cell phones, smartphones, MP3 players, digital cameras, eBooks, and tablet PCs. In these devices, the SiA444DJT will be used for high-frequency DC/DC converters, while the SiA429DJT is ideal as a load switch or charger switch and can also be used as a high-side switch in DC/DC buck converter applications.

The MOSFETs are 100 % Rg tested and are halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC.  

Samples and production quantities of the new SiA444DJT and SiA429DJT TrenchFET power MOSFETs are available now, with lead times of 12 to 14 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.15 per piece in 100,000-piece quantities. Follow TrenchFET power MOSFETs at http://twitter.com/vishayindust
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