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Infineon Launches 650V MOSFET with Integrated Fast Body Diode

Tue, 02/08/2011 - 4:38am
infineonGermany, 7th February – Infineon is now rolling out another important innovation with its latest generation of high-voltage CoolMOS MOSFETs. The CFD2 high-voltage transistor has a drain-source voltage of 650V and an integrated fast body diode. The softer commutation behavior and therefore better EMI characteristics give this product a clear competitive advantage. The CFD 2 650V product portfolio provides all benefits of fast switching super-junction MOSFETs like better light load efficiency, reduced gate charge, easy implementation and outstanding reliability. Infineon expects the greatest market potential for this transistor to be in solar power inverters, server computers, LED lighting and telecommunications equipment. “We have continuously developed the CoolMOS transistor technology to maximize the efficiency thus offering our customers a clear competitive edge. We make a decisive contribution to the sustainable conservation of resources for future generations”, said Andreas Urschitz, General Manager of Power Management & Supply Discretes at Infineon Technologies. “The solar energy harnessing system for the soccer stadium in Kaohsiung, Taiwan, is a fine example of the successful deployment of our CoolMOS technology. CoolMOS chips in solar inverters ensure the highest possible energy efficiency. Therewith, the solar plant generates 1.1 million kilowatt-hours power and saves about 660 tons CO2 per year.”
www.infineon.com

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