45W GaN on SiC transistors offer 17dB of gain
RFMW, Ltd. (San Jose, CA) announces design and sales support for two new 45W GaN on SiC transistors from TriQuint. The T1G4004532-FL (flanged) and T1G4004532-FS (earless) are wideband, DC to 3.5GHz devices offering 17dB of gain, nearly twice that of competing GaN devices. Other features include:
• Input matched for S-band operation.
• Operation from a 32V supply.
• A low thermal resistance base material and are housed in industry standard packaging for use in Radar, EW and general purpose, wideband applications.
For more information on the 45W GaN on SiC transistors, visit www.rfmw.com.