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1200-V IGBTs promise long life, energy savings

Thu, 06/12/2014 - 10:37am

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1200 V IGBTSTMicroelectronics’ (Geneva) latest 1200-V IGBTs use second-generation trench-gate field-stop high-speed technology to boost energy efficiency and ruggedness in applications such as solar inverters, welders, uninterruptible power supplies, and power factor correction (PFC) converters. According to the company, the H Series 1200-V IGBTs have up to 15 percent lower turn-off losses and up to 30 percent lower turn-on losses. The saturation voltage (Vce(sat)) down to 2.1 V (typical, at nominal collector current and 100°C) ensures minimal overall losses for higher-efficiency operation at switching frequencies above 20 kHz. They also offer:

  • The option of an integrated very fast-recovery anti-parallel diode for hard-switching circuits and minimizing energy losses in circuits with a freewheel diode.
  • Desirable EMI (electromagnetic interference) characteristics.
  • A positive temperature coefficient of Vce(sat), with close distribution of parameters from device to device for safer parallel operation in high-power applications.

For more information, visit www.st.com

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