Super junction MOSFETs improve power efficiency, reduce product footprint
Toshiba America Electronic Components (Irvine, CA) has introduced a new series of high-speed switching type super junction MOSFETs. The new DTMOS IV-H series consists of the TK31N60X, TK39N60X and TK62N60X, and is based on Toshiba's fourth generation 600V super junction MOSFET DTMOS IV series. Using Toshiba's single epitaxial process, the new DTMOS IV-H series of super junction MOSFETs is suited to applications that require high reliability, power efficiency, and a compact design, such as high efficiency switching power supplies for servers and telecom base stations. Features include:
• Gate pattern optimization, resulting in a 45 percent reduction in Gate-Drain charge when compared with conventional DTMOS IV.
• A small increase in low ON-resistance at high temperatures due to the use of the single epitaxial process.
• Low ON-resistance lineup.
For more information, visit www.toshiba.com.