Silicon devices help address ESD and surge protection challenges
TE Connectivity’s Circuit Protection business unit (Menlo Park, CA) has introduced a new family of silicon ESD (SESD) devices exhibiting ±20-kV and ±22-kV air discharge ratings to help designers solve the pervasive protection challenge caused by charged board events (CBEs). The new-generation SESD products come in both uni-directional and bi-directional configurations and are 1, 2, and 4-channel devices. They are available in tiny 0201 and 0402 sizes and standard flow-through packages. Features include:
- A surge capability of 2.2 A for 4-channel array and 2.5 A for 1-and 2-channel devices.
- An input capacitance of 0.15 pF (bi-directional) and 0.30 pF (uni-directional), at the high frequency spectrum, to help meet USB, HDMI, eSATA and other high-speed signal requirements.
- A low clamping voltage (<15 V) to help facilitate fast turn-on time and minimize energy let-through to sensitive down-stream chipsets.
- A low leakage current of 50 nA.
For more information, visit www.circuitprotection.com