[[{“fid”:”37393″,”view_mode”:”default”,”fields”:{“field_file_image_alt_text[und][0][value]”:””,”field_file_image_title_text[und][0][value]”:””},”type”:”media”,”attributes”:{“height”:300,”width”:300,”style”:”float: right; margin: 5px;”,”class”:”media-element file-default”}}]]Advanced Power Electronics Corp. (San Jose, CA) has recently launched new N-channel enhancement-mode power MOSFETs offering a fast switching performance and very low on-resistance. The AP99T03GS-HF-3 MOSFET comes in a TO-263 package. Features include:
- On-resistance of 2.5mΩ.
- Drain-source breakdown voltage of 30V.
- Continuous drain current of 120A.
For more information, visit www.a-powerusa.com.