Schottky diodes feature zero recovery time
Richardson RFPD announces availability and full design support capabilities for four new 650V Silicon Carbide (SiC) Schottky diodes from Microsemi Corporation (Microsemi). The new devices are the latest addition to Microsemi's SiC Schottky product family.
The new devices feature zero recovery time (trr), low forward voltage and low leakage current, and are available in compact footprint packages. They are designed to improve performance in high-power industrial systems, including switched-mode power supply (SMPS), solar inverters, and power factor correction (PFC) applications.
Key features of the new 650V SiC Schottky diodes include:
More information is available online at www.richardsonrfpd.com.