Insulated-gate bipolar transistors feature low saturation voltage and low tail current
Richardson RFPD announces availability and full design support capabilities for three new 650V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corporation (Microsemi). The new devices are the latest addition to Microsemi's family of 45A to 95A IGBTs.
These ultra-fast 650V NPT IGBTs represent the newest generation of Microsmi IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses. They feature low saturation voltage, low tail current, short-circuit withstand ratings, high frequency switching, and ultra-low leakage current. They also allow developers to reduce total system cost by using them to replace more costly 600V to 650V MOSFETs in lower speed industrial applications up to 150 kHz.
The entire family of 650V and 1200V NPT IGBTs leverages Microsemi's leading-edge Power MOS 8 technology and creates new benchmarks for IGBT efficiency.
More information is available online at www.richardsonrfpd.com.