GaN amplifier offers exceptional thermal resistance
Nitronex announced the release of the NPA1006, a new broadband GaN amplifier. This 28-V, 20-MHz to 1-GHz, 15-W amplifier with 14 dB gain and 60 percent drain efficiency is housed in an industry-standard 6-mm x 5-mm DFN plastic package. The thermal resistance is 4.6°C/W, representing, according to the company, best in class for this power level. The amplifier input is internally matched to 50 Ohms for easy integration and the output needs only a simple two element external match for full band coverage. The NPA1006 utilizes Nitronex's 28V NRF1 GaN HEMT process. Applications include broadband general purpose, test and measurement, defense communications, land mobile radio and wireless infrastructure.