GaN high electron mobility transistors target 2.9- to 3.5-GHz S-Band radar amplifier systems
Cree has introduced two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 2.9-GHz to 3.5-GHz S-Band radar amplifier systems, including: weather, air traffic control, marine, port surveillance, and search and rescue radar applications. Based on the company’s high power density 50-V, 0.4-µm GaN on silicon carbide (SiC) foundry process and performance rated at 85°C case, both the 150-W CGHV35150 and 400-W CGHV35400F exhibit high efficiency, high power gain, wide bandwidth capabilities, and uniform performance at high temperatures. The CGHV35150 features 150-W typical output power, 13.5-dB power gain, and 50 percent typical drain efficiency. The CGHV35400F features 400 W of typical output power, 10.5-dB power gain, and 60 percent typical drain efficiency. Both the 150-W and 400-W S-Band GaN HEMTs are specified at 85°C case and feature <0.3-dB pulsed amplitude droop.
Cree, Inc., www.cree.com