FETs designed to meet the requirements of X to Ku band low noise block downconverters for direct broadcast satellites
Renesas Electronics and California Eastern Laboratories (CEL) introduce the NE3516S02 and NE3513M04 GaAs FETs which were specifically designed to meet the demanding requirements of X to Ku band low noise block (LNB) downconverters for direct broadcast satellites. These general purpose GaAs FETs are also well suited for general purpose X to Ku band wireless communications.
These new GaAs FETs offer improved Associated Gain and Noise Figure performance over previous generation devices.
Typical performance at 12GHz with bias 2V / 10mA:
NE3516S02: NF = 0.35dB, Ga = 14dB (typically used for 1st stage)
NE3513M04: NF = 0.45dB, Ga = 13dB (typically used for 2nd stage)
Both devices maintain impressive NF and Ga at the lower bias of 2V / 6mA, as follows:
NE3516S02: NF = 0.35dB, Ga = 13.5dB
NE3513M04: NF = 0.50dB, Ga = 12dB
Pricing, packaging, and availability
Samples are available now at CEL. Pricing is as follows:
NE3516S02: $0.72 @ 100K pcs
NE3513M04: $0.52 @ 100K pcs
For more information on this new series of NE3516S02 and NE3513M04 Small Signal GaAs FETs, please visit