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Discrete MOSFETs meet the demanding requirements of 2-way radios

Mon, 10/14/2013 - 1:18pm

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Renesas Electronics and California Eastern Laboratories (CEL) introduce the NE555 family of RF Discrete LD MOSFETs which were specifically designed to meet the demanding requirements of 2-Way Radios. The NE555 series are also great medium power transistors for Automatic Metering Infrastructure, RFID readers, and general short-range wireless applications. 

Key features

• RF output power options of 9W, 7W, and 2W at frequencies up to 1GHz, with nominal 7.5V supply.

• High Power Added Efficiencies in the 52-60% range for 915MHz, and 63-73% range for 157MHz.

• Built-in ESD protection, and high mismatch tolerance (ruggedness).

• High thermal conductivity packaging. 

Pricing, packaging and availability

Samples are available now at CEL.  Pricing is as follows:

NE5550979A 9W LDMOS FET:      $3.50 @ 10K pcs

NE5550779A 7W LDMOS FET:      $3.00 @ 10K pcs

NE5550279A 2W LDMOS FET:      $1.60 @ 10K pcs

NE5550234    2W LDMOS FET:      $0.80 @ 10K pcs


CEL has evaluation boards optimized at 460MHz and 915MHz, and offers extensive design support.

 

For more information on this new series of NE555 RF Discretes, please visit www.cel.com/NE555.

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