Discrete MOSFETs meet the demanding requirements of 2-way radios
Renesas Electronics and California Eastern Laboratories (CEL) introduce the NE555 family of RF Discrete LD MOSFETs which were specifically designed to meet the demanding requirements of 2-Way Radios. The NE555 series are also great medium power transistors for Automatic Metering Infrastructure, RFID readers, and general short-range wireless applications.
• RF output power options of 9W, 7W, and 2W at frequencies up to 1GHz, with nominal 7.5V supply.
• High Power Added Efficiencies in the 52-60% range for 915MHz, and 63-73% range for 157MHz.
• Built-in ESD protection, and high mismatch tolerance (ruggedness).
• High thermal conductivity packaging.
Pricing, packaging and availability
Samples are available now at CEL. Pricing is as follows:
NE5550979A 9W LDMOS FET: $3.50 @ 10K pcs
NE5550779A 7W LDMOS FET: $3.00 @ 10K pcs
NE5550279A 2W LDMOS FET: $1.60 @ 10K pcs
NE5550234 2W LDMOS FET: $0.80 @ 10K pcs
CEL has evaluation boards optimized at 460MHz and 915MHz, and offers extensive design support.
For more information on this new series of NE555 RF Discretes, please visit www.cel.com/NE555.