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Enhanced gallium nitride FET Family adds 100-V, 16 milli-Ohm power transistor

Thu, 09/12/2013 - 5:38pm

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GaN transistorsEfficient Power Conversion Corporation introduced its EPC2016 enhancement mode gallium nitride power transistors. This a 3.36-mm2, 100-VDS, 11-A device includes a maximum RDS(on) of 16 mΩ with 5 V applied to the gate. This GaN power transistor presents high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package. Applications include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and high frequency circuits. Additionally, the company’s EPC9010 development board, featuring the EPC2016 devices and the LM5113 gate driver IC in a half bridge configuration supports designers in evaluating and incorporating eGaN FETs into their power conversion systems. 

Efficient Power Conversion Corporation, www.epc-co.com

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