120W GaN transistors offer > 50% drain efficiency from a 36V supply
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration. Both devices operate from DC to 3.5 GHz and offer > 50% drain efficiency from a 36V supply. Linear gain is as high as 15dB. Both packages offer low thermal resistance and the RF inputs of the T1G4012036-FL and T1G4012036-FS are pre-matched for S-Band operation. Applications for the T1G4012036 include wideband or narrowband amplifiers, civilian and military radar, communication systems and jammers.