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MOSFETs increase efficiency up to 6% while reducing footprint 50%

Thu, 08/15/2013 - 2:44pm

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International Rectifier introduced two high performance R8 radiation hardened (RAD-Hard) power MOSFETs optimized for space grade point-of-load (POL) voltage regulator applications.

The new R8 logic level power MOSFETs utilize Trench technology to offer extremely low on-state resistance (RDS(on)) of 12 milliohms (typical) and total gate charge (QG) of 18nC (typical), increasing efficiency performance by up to 6% compared to existing solutions. The IRHLNM87Y20SCS device has a BVDSS rating of 20V and a maximum drain current (ID) rating of 17A. The new devices are available in IR’s new SMD 0.2 surface-mount style package, achieving a 50% space saving compared to the existing SMD 0.5 package solution. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions.

The products are fully characterized for radiation performance to 300Krads of TID and SEE with LET of 81 MeV-cm2/mg with VGS rating of 12V.  Depending on the intended design orbit and anticipated radiation environment, R8 RAD-Hard MOSFETs may be well suited for applications requiring a mission life of 15 years or more.

Specifications

Part Number

Package

BVDSS

ID

RDS(on)

QG

ƟJC

IRHLNM87Y20SCS

SMD 0.2

20V

17A

15 mohms

24 nC

3.5 °C/W

IRHLF87Y20SCS

TO-39

20V

12A

32 mohms

27 nC

8.0 °C/W


Datasheets, package dimensions and case outlines are available on the International Rectifier website at www.irf.com

Availability and pricing

Pricing for the R8 MOSFETs begins at $594 each for 250-unit quantity. Production orders are available immediately. Prices are subject to change. This product is subject to U.S. export control laws and regulations.

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