Module offers enhanced protection by means of greater creepage
Reliable and robust with lower conduction and switching losses and the highest power density: those are the exceptional properties of the new 4.5kV IHV module of Infineon Technologies AG. The highly insulating 6.5 kV housing offers enhanced protection by means of greater creepage and clearance distance and can be used in demanding environments. With its further optimi zed thermal properties, the new IHV module is suitable above all for use in traction applications.
The module now available is based on an IGBT 3 with trench field stop technology and a field stop diode. In combination with a base plate made of aluminum-silicon carbide with a low expansion coefficient and high thermal conductivity, it guarantees low conduction and switching losses and thus high energy efficiency combined with robustness. The module is designed for current between 400 and 1,200A and features enhanced DC stability. It can be used in an extended temperature range from -50°C to 125°C. It retains its blocking capability completely even below 0°C.
Availability and configuration
The new IHV module that is now available complements the existing product family, which currently consists of the module classes 3.3 kV, 4.5 kV and 6.5 kV, each in single-switch and dual-diode configurations. An extension of the 4.5 kV module class with a chopper and another diode configuration is planned for the beginning of 2014. For the first half of 2014 Infineon plans the launch of housing type B for applications in the area of medium voltage drives, power transmission including HVDC, and distribution and inverters for wind power stations.
With the now extended product family Infineon can offer a broad IHV portfolio with different customer-specific topologies on a standardized platform. Combined with the robustness, high reliability and energy efficiency of the modules, the result is competitive system costs for the customer. Customers also benefit from a global sales organization that combines local support with the technological expertise of an international semiconductor manufacturer.