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High-frequency silicon carbide half-bridge module features 1200V blocking

Thu, 05/30/2013 - 10:25am

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Mouser Electronics announced it is stocking the industry's first SiC MOSFET and SiC Schottky diode combined in a single half-bridge package—the CAS100H12AM1 from Cree.

Cree CAS100H12AM1 1200V High-Frequency Silicon Carbide Half-bridge Module is the first commercially available all silicon carbide (SiC) power module. It is also the first fully-qualified module with both SiC MOSFETs and SiC Schottky diodes combined in a single half-bridge package. This new dual module features ultra-low loss and high ruggedness for high-frequency operation. The CAS100H12AM1 has demonstrated up to 100kHz operation and provides 100A current handling at 1200V blocking. Higher frequency operation enables compact and lightweight systems and less expensive inductors and capacitors in the system. The CAS100H12AM1 is ideal for industrial applications including high power converters, motor drives, solar inverters, UPS and SMPS, and induction heating. To learn more, visit http://www.mouser.com/new/cree/cree-MOSFETdiode/.

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