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Six-hundred-Volt GaN-on-silicon power devices are JEDEC-qualified

Thu, 03/14/2013 - 11:39am

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GaN (Gallium Nitride) on silicon transistorsTransphorm Inc. announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing what is believed to be the world’s first JEDEC-qualified 600 V GaN device platform, according to the company. Based on Transphorm’s EZ-GaN technology, the TPH3006PS GaN high electron mobility transistor (HEMT) combines low switching and conduction losses to reduce energy loss by 50 percent compared to conventional silicon-based power conversion designs, according to the company. The TO-220-packaged GaN transistor features low on-state resistance RDS(on) of 150 milliohms (mΩ), low reverse-recovery charge (Qrr) of 54 nanocoulombs (nC) and high-frequency switching capability. Also available in industry-standard TO-220 packages, the TPS3410PK and TPS3411PK GaN diodes offer 6 A and 4 A operating currents, respectively, with a forward voltage (Vf) of 1.3 Volts. In addition, three application kits — PFC (TDPS400E1A7), Daughter Board (TDPS500E0A) and Motor Drive (TDMC4000E0I) — are available for rapidly benchmarking the in-circuit performance of Transphorm’s products.

Transphorm Inc., www.transphormusa.com

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