Gate bipolar transistor technology platform reduces power dissipation
International Rectifier, IR introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR’s latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.
The novel Gen8 design allows best-in-class Vce(on) to reduce power dissipation and increase power density, and delivers superior robustness.
The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.
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