Advertisement
Product Releases
Advertisement

MOSFET packaging technology enables power designers to remove heat more effectively

Thu, 10/18/2012 - 9:18am

Alpha and Omega Semiconductor Limited set a new standard in power density and technology innovation for discrete power MOSFETs with exposed-source XSFET, a new patent-pending packaging technology. XSFET incorporates the packaging technology where the bottom of the package is the “source”, which enables power designers to remove heat more effectively to PCB ground plane. It features a large top heat slug which can be “top-exposed” or “non top-exposed” depending upon design criteria. The top-exposed version delivers a significant increase in heat transfer, which helps to reduce power losses in a system by keeping the die cooler.

Different from some of the existing double-sided cooling packaging options in the market today, AOS’s new exposed-source packaging solution offers standard lead-frame based board mounting in a fully encapsulated DFN molded package, minimizing the thermal discrepancy between the device and the PCB while offering near zero parasitic inductance with its layout friendly footprint.

Utilizing AOS’s new 30V AlphaMOS silicon technology together with exposed-source packaging, AOE6580 and AOE6580T (with top-exposed option) are the best-in-class 30V N-channel devices in the market today. Both devices are optimized for high performance demanding motor control, OR’ing, and E-fuse applications. Their very low on-resistance (RDS(ON) = 0.95mΩ max @10VGS) in exposed-source DFN 5x6 package also make these devices very attractive for power supplies in computing, telecom, and high power density point-of-load sockets. Optimized for ultra-low conduction and switching losses, AOE6580 and AOE6580T minimize power losses in applications, thus providing power designers the flexibility in optimizing losses, performance, space, and cost.

AOE6770T and AOE6772T offer very high efficiency in server and high-end notebook applications by utilizing the combination of 25V AlphaMOS silicon technology and exposed-source packaging technology with the top-exposed option in industry standard DFN5x6 footprint. AOE7770T completes the solution as high-side MOSFET by combining exposed-source technology in compact DFN3x3 footprint with top-exposed option.

“AOS’s new XSFET packaging technology sets a new Industry standard for higher power density and performance. Our new devices with both “top-exposed” and “non top-exposed” versions enable power designers to reduce power losses and increase performance significantly.” said Yalcin Bulut, Vice President of Discrete Product Lines at AOS. “The exposed-source technology allows electronic designs to achieve higher current density while keeping components operating cooler. AOS tailored its technology to lead in innovation for solutions which make a difference in today’s demanding application requirements.”

AOE6770T, AOE6772T, AOE7770T, AOE6580, and AOE6580T are in halogen-free DFN packages and are MSL1 rated. They are all 100% UIS and Rg tested.

Device Specification Table

 

Package

Top Exposed

VDS

VGS

Typ
RDS(ON)
@ 10V

Typ
RDS(ON)
@ 4.5V

Typ
Qg

@ 4.5V

ID @ TA = 25°C

ID @ TA = 100°C

AOE6770T

XS-5x6

Yes

25 V

±20 V

1.25 mOhm

1.95 mOhm

40 nC

145 A

90 A

AOE6772T

XS-5x6

Yes

25 V

±16 V

1.15 mOhm

1.6 mOhm

50 nC

145 A

90 A

AOE7770T

XS-3x3

Yes

30 V

±20 V

2.4 mOhm

3.4 mOhm

14 nC

76 A

48 A

AOE6580

XS-5x6

No

30 V

±20 V

0.78 mOhm

1.4 mOhm

34 nC

150 A

95 A

AOE6580T

XS-5x6

Yes

30 V

±20 V

0.78 mOhm

1.4 mOhm

34 nC

178 A

112 A


For more information, please visit www.aosmd.com.

Advertisement

Share this Story

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading