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MOSFETs offer cost-effective, flexible solution for low-power applications

Fri, 04/20/2012 - 9:51am

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International Rectifier announced the introduction of an extensive portfolio of devices featuring IR’s latest low-voltage HEXFET MOSFET silicon in a TSOP-6 package for low power applications including load switch, charge and discharge switches for battery protection and inverter switches.

Featuring very low on-state resistance (RDS(on)) to significantly cut conduction losses, the new power MOSFETs are available as 20V and 30V devices in N-and P-Channel configurations with a maximum gate drive from 12Vgs to 20Vgs.

“IR’s new portfolio of power MOSFETs in a TSOP-6 package complement our existing devices housed in SOT-23 and SO-8 packages to provide customers more flexibility in designing their systems.  As a result of the low RDS(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost,” said Stéphane Ernoux, Director, IR’s Power Management Devices Business Unit.

All of the new devices are MSL1 and RoHS compliant containing no lead, bromide or halogen.

Specifications 

Part Number

(- TRPbF)

BVDSS

Max VGS

Id  max @ 25ºC

Typ/Max RDS(on) @ …(mΩ)

10V

4.5V

2.5V

IRFTS9342

-30V

20V

5.9A

31/39

53/66

NA

IRLTS2242

-20V

12V

6.9A

N/A

26/32

45/55

IRLTS6342

30V

12V

7.8A

12/20

15/24

IRFTS8342

30V

20V

8.2A

15/19

22/29

N/A

Datasheets and a MOSFET product selection tool are available on the International Rectifier website at http://www.irf.com.

Availability and Pricing

Pricing for the IRFTS9342TRPBF begins at US $0.12 each in 1,000 unit quantities. Production orders are available immediately. Prices are subject to change.

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