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C-band Gallium Nitride High-Electron Mobility Transistors Address Satellite Earth Stations

Thu, 12/01/2011 - 7:25am

HEMTMitsubishi Electric Corporation announced it has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4–8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a sample basis beginning January 10, 2012.

  

Gallium Arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters. In recent years, however, Gallium Nitride (GaN) amplifiers have become increasingly popular due to their high breakdown-voltage and power density, high saturated electron speed and ability to contribute to power saving and the downsizing of power transmitter equipment. 

 

simplified schematic

High output power, efficiency and high-voltage operation

- 100 W or 50 W output power

- More than 43% of power added efficiency

- 40 V high-voltage operation

Low Distortion

- Output power meeting 3rd-order Inter Modulation (IM3) = -25dBc of 46dBm

- Internally impedance- matched

Other Features

MGFC50G5867

MGFC47G5867

Operating

Conditions

VDS 2

40 V

40 V

IDQ 3

1.15 A

0.58 A

Frequency

5.8~6.7 GHz ?C band?

Output Power of 3dB Compression

P3dB

(Typ.)

50 dBm

(100 W)

47 dBm

(50 W)

Linear Power

Gain

Glp 4

(Typ.)

10 dB

10 dB

Power Added Efficiency

PAE5  

(Typ.)

43 %

45 %

 

2 Drain to Source Voltage
3 Quiescent Drain Current
4 @ frequency = 6.4 GHz
5 Power Added Efficiency (@P3dB, frequency = 6.4 GHz)

For more information visit http://www.MitsubishiElectric.com

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